Silicon atomic layer growth using flash heating in CVD
نویسندگان
چکیده
منابع مشابه
Silicon atomic layer growth using flash heating in CVD
-Si atomic layer growth on Si was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment of SiH, or Si2H6 gas. In the case of SiH4, about 0.4 atomic layer deposition per single flash light shot was observed on Si(1OO) at a substrate temperature of 385OC and at a SiH, partial pressure of 500Pa. The adsorption process of SiH, can be explained quantitati...
متن کاملSingle Atomic Layer Ferroelectric on Silicon.
A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization...
متن کاملCarrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating
The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy ...
متن کاملGrowth of Silicon Nanowires by Laser-assisted Cvd of Silane
The low-dimensional electron confinement effects in nanostructures is one of motivation for development of new research areas in growth technologies and materials engineering. To test this fundamental concept, one-dimentional nanostructures, such as nanotubes and nanowires stay good candidates. Thus nanoelectronics is certainly now the branch with the most significant commercial impact as predi...
متن کاملCVD Growth of Mono- and Bi-Layer Graphene from Ethanol
CVD on metal substrates has been provn effective in the synthesis of graphene. But before application in graphene electronics, the quality of the synthesized graphene needs to be improved. Therefore a reliable method to grow large-scale, highquality graphene is required. Besides, the mechanism of graphene growth is not fully understood. Here we report utilizing CVD to produce monoand bi-layer g...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1993
ISSN: 1155-4339
DOI: 10.1051/jp4:1993362